Temperature-Frequency Characteristics of the Composition HDPE + x vol.% InP

In the work obtained new matrix composite materials of high density polyethylene (HDPE) with a semiconductor additive. With a measuring instrument bridge E8-7 and E7-20 studied temperature and frequency dependence of the permittivity (ε) and the dielectric loss tangent (tgδ) composites HDPE + x vol.% InP at 290-440K temperature and frequency 25-106Hz intervals. Revealed that with increasing the volume content of the filler InP semiconductor is increased and ε tgδ. This occurs so that with increasing the volume content of the filler component the structure becomes unstable and the number of formed clusters is increased, and this leads to an increase the dielectric characteristics.